Glass sealing with transparent materials having transient absorption properties

ABSTRACT

Transparent glass-to-glass hermetic seals are formed by providing a low melting temperature sealing glass along a sealing interface between two glass substrates and irradiating the interface with laser radiation. Absorption by the sealing glass and induced transient absorption by the glass substrates along the sealing interface causes localized heating and melting of both the sealing glass layer and the substrate materials, which results in the formation of a glass-to-glass weld. Due to the transient absorption by the substrate material, the sealed region is transparent upon cooling.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of and claims the benefitof priority of co-pending U.S. application Ser. No. 13/841,391 filed onMar. 15, 2013, which claims the benefit of priority under 35 U.S.C. §119 of U.S. Provisional Application Ser. No. 61/731,784 filed on Nov.30, 2012, the contents of which are hereby relied upon and incorporatedherein by reference in their entireties.

BACKGROUND

The present disclosure relates generally to hermetic barrier layers, andmore particularly to methods and compositions used to seal solidstructures using low melting temperature glasses.

Hermetic barrier layers can be used to protect sensitive materials fromdeleterious exposure to a wide variety of liquids and gases. As usedherein, “hermetic” refers to a state of being completely orsubstantially sealed, especially against the escape or entry of water orair, though protection from exposure to other liquids and gases iscontemplated.

Glass-to-glass bonding techniques can be used to sandwich a workpiecebetween adjacent substrates and generally provide a degree ofencapsulation. Conventionally, glass-to-glass substrate bonds such asplate-to-plate sealing techniques are performed with organic glues orinorganic glass frits. Device makers of systems requiring thoroughlyhermetic conditions for long-term operation generally prefer inorganicmetal, solder, or frit-based sealing materials because organic glues(polymeric or otherwise) form barriers that are generally permeable towater and oxygen at levels many orders of magnitude greater than theinorganic options. On the other hand, while inorganic metal, solder, orfrit-based sealants can be used to form impermeable seals, the resultingsealing interface is generally opaque as a result of the metal cationcomposition, scattering from gas bubble formation, and distributedceramic-phase constituents.

Frit-based sealants, for instance, include glass materials that havebeen ground to a particle size ranging typically from about 2 to 150microns. For frit-sealing applications, the glass frit material istypically mixed with a negative CTE material having a similar particlesize, and the resulting mixture is blended into a paste using an organicsolvent. Example negative CTE inorganic fillers include cordieriteparticles (e.g. Mg₂Al₃[AlSi₅O₁₈]) or barium silicates. The solvent isused to adjust the viscosity of the mixture.

To join two substrates, a glass frit layer can be applied to sealingsurfaces on one or both of the substrates by spin-coating or screenprinting. The frit-coated substrate(s) are initially subjected to anorganic burn-out step at relatively low temperature (e.g., 250° C. for30 minutes) to remove the organic vehicle. Two substrates to be joinedare then assembled/mated along respective sealing surfaces and the pairis placed in a wafer bonder. A thermo-compressive cycle is executedunder well-defined temperature and pressure whereby the glass frit ismelted to form a compact glass seal.

Glass frit materials, with the exception of certain lead-containingcompositions, typically have a glass transition temperature greater than450° C. and thus require processing at elevated temperatures to form thebarrier layer. Such a high-temperature sealing process may bedetrimental to temperature-sensitive workpieces.

Further, the negative CTE inorganic fillers, which are used in order tolower the thermal expansion coefficient mismatch between typicalsubstrates and the glass frit, will be incorporated into the bondingjoint and result in a frit-based barrier layer that is neithertransparent nor translucent.

Based on the foregoing, it would be desirable to form glass-to-glassseals at low temperatures that are transparent and optionally hermetic.

SUMMARY

Disclosed herein are methods for forming a laser-sealed interfacebetween opposing glass substrates using a low melting temperature glass(low T_(g)) sealing material at the interface. Embodiments of the methodinvolve temporary absorption of laser radiation and the concomitantlocalized melting of both the glass sealing material and the glasssubstrates to affect the seal. After the seal is formed and thematerials are cooled, the resulting package is transparent.

A method of protecting a workpiece comprises forming a low T_(g) glasssealing layer over a major surface of a first glass substrate, arranginga workpiece to be protected between the first substrate and a secondsubstrate where the sealing layer is in contact with the secondsubstrate, and locally heating the glass sealing layer and the glasssubstrates with laser radiation to melt the sealing layer and the glasssubstrates to form a glass seal between the substrates. Absorption ofthe laser radiation by the glass substrates is transient andthermally-induced.

The laser radiation can be translated to define a sealing interface thatcan cooperate with the glass substrates to define a hermetic package forthe workpiece. Example workpieces include quantum dots. Example laserradiation includes ultra-violet (UV) radiation.

Additional features and advantages will be set forth in the detaileddescription which follows, and in part will be readily apparent to thoseskilled in the art from that description or recognized by practicing theinvention as described herein, including the detailed description whichfollows, the claims, as well as the appended drawings.

It is to be understood that both the foregoing general description andthe following detailed description present embodiments of the invention,and are intended to provide an overview or framework for understandingthe nature and character of the invention as it is claimed. Theaccompanying drawings are included to provide a further understanding ofthe invention, and are incorporated into and constitute a part of thisspecification. The drawings illustrate various embodiments of theinvention and together with the description serve to explain theprinciples and operations of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram illustrating the formation of ahermetically-sealed device via laser-sealing according to oneembodiment;

FIG. 2 is a plot of transmission versus wavelength for different displayglass substrates;

FIG. 3 is a plot showing the temperature dependence of UV absorption insilica glass;

FIG. 4 is a plot of transmission versus time showing induced absorptionand recovery for a low T_(g) glass-coated borosilicate display glass;

FIG. 5 is a plot of transmission versus time showing the effect of poweron transmission through a low T_(g) glass-coated borosilicate displayglass;

FIG. 6 is a plot of transmission versus time for different displayglasses;

FIG. 7 is a photograph of a spot seal formed via laser-sealing;

FIGS. 8A and 8B are plan-view photographs of a portion of a glass weldformed via laser-sealing;

FIGS. 9A and 9B are schematic diagrams of examples of an LED assemblysealed using low melting temperature glass layers;

FIGS. 10A through 10C are further examples of an LED assembly comprisinga low melting temperature glass seal; and

FIG. 11 is an example vacuum-insulated glass window comprising lowmelting temperature glass seals.

DETAILED DESCRIPTION

Although the sealing techniques disclosed herein are described incertain embodiments with respect to manufacturing a hermetically-sealedOLED display, it should be understood that the same or similar sealingtechniques can be used to seal two glass plates to one another that canbe used in a wide variety of applications and devices. Accordingly, thesealing techniques of the present disclosure should not be construed ina limited manner. For example, thin film sensors and vacuum-insulatedglass windows may be fabricated using the present methods.

A sealed structure comprises opposing glass substrates and a low meltingtemperature glass sealing layer formed at an interface between thesubstrates. A laser is used to locally heat the sealing material as wellas the respective substrates to affect the seal. During sealing, thesealing material melts and re-solidifies to form the seal. Inembodiments, material from one or both of the substrates also melts andre-solidifies in a region proximate the melted and re-solidified sealingmaterial. In such embodiments, the substrate material may constitute aportion of the sealed interface, resulting in a glass-to-glass weld.

In embodiments, the glass substrates exhibit transient absorption of theincident laser radiation. Initial absorption by the sealing glass meltsthe sealing glass material and, due principally to a local increase intemperature of the glass substrate, induces a temporary absorption ofthe laser radiation by the glass substrate, which may cause localizedmelting of the substrates. Absorption by the glass substrates decaysafter the sealing process is complete, resulting in anoptically-transparent seal.

Transient absorption as used herein refers generally to anylight-material interaction involving additional absorption of light fromlight-induced defects, to include color center formation. A feature oftransient absorption is that additional absorption occurs in thematerial at excitation wavelengths above and beyond simple linearabsorption. Thus, in various embodiments, temporary absorption of laserradiation by a glass substrate can occur by increasing the temperatureof the substrate material. Transient absorption may include multi-photonprocesses.

In contrast to pico-second pulse width, purely non-linear absorptionphenomena observed in some glass materials, the methods described hereininvolve non-linear absorption of the glass substrate materials atrelatively long (1-10 ns) laser pulses. Typical power densities for 355nm lasers, for instance, operating at a repetition rate of about 30 kHzare about 0.5 to 1 MW/cm².

As used herein, the term “induced absorption” refers to the absolutevalue of the difference in internal transmission per centimeter of theglass upon exposure to laser irradiation. Of particular interest is theinduced absorption at about 355 nm, which means the induced absorptionat 355 nm upon exposure to an excimer laser operating at about 355 nmfor 10 billion pulses at about 70 μJ/(pulse·cm²).

Thus, in embodiments, laser radiation incident on a glasssubstrate/sealing glass/glass substrate interface can initially beabsorbed by the sealing glass material inducing melt formation and, inturn, cause a local increase in temperature which temporarily alters theabsorption characteristics of the adjacent glass substrate material. Atemperature increase in glass substrate material can occur through heatconduction from the sealing glass and via a temperature-inducedabsorption enhancement from the illumination. Transient absorption ofthe laser radiation by the glass substrate can cause local melting ofthe glass substrate material in addition to local melting of the sealingglass, forming a glass-to-glass seal. Eagle 2000® glass, for example,softens at a temperature of about 830° C. When the laser radiation isremoved and the sealed area cooled, the absorption characteristics ofthe glass substrate material return to their pre-processed state, i.e.,optically transparent.

The integrity of the seal and its strength is maintained by slow cooling(self-annealing) of the substrate glass and the attendant color centerrelaxation, as well as by the relative thinness of the low meltingtemperature sealing glass, which minimizes the impact of any CTEmismatch. Further minimizing the CTE mismatch in the sealed region isthe inter-diffusion of the mismatched materials within the weld zone,which effectively dilutes the expansion mismatch.

The present method can be used to form a hermetically-sealed package. Infurther embodiments, the method can be used to form spot seals fornon-hermetic glass packages.

A method of forming an encapsulated workpiece according to oneembodiment is illustrated schematically in FIG. 1. In initial step, apatterned glass layer 380 comprising a low melting temperature (i.e.,low T_(g)) glass is formed along a sealing surface of a first planarglass substrate 302. The glass layer 380 may be deposited via physicalvapor deposition, for example, by sputtering from a sputtering target180. In one embodiment, the glass layer may be formed along a peripheralsealing surface adapted to engage with a sealing surface of a secondglass substrate 304. In the illustrated embodiment, the first and secondsubstrates, when brought into a mating configuration, cooperate with theglass layer to define an interior volume 342 that contains a workpiece330 to be protected. In the illustrated example, which shows an explodedimage of the assembly, the second substrate comprises a recessed portionwithin which a workpiece 330 is situated.

A focused laser beam 501 from laser 500 can be used to locally melt thelow melting temperature glass and adjacent glass substrate material forma sealed interface. In one approach, the laser can be focused throughthe first substrate 302 and then translated (scanned) across the sealingsurface to locally heat the glass sealing material. In order to affectlocal melting of the glass layer, the glass layer is preferablyabsorbing at the laser processing wavelength. The glass substrates canbe initially transparent (e.g., at least 50%, 70%, 80% or 90%transparent) at the laser processing wavelength.

In an alternate embodiment, in lieu of forming a patterned glass layer,a blanket layer of sealing (low melting temperature) glass can be formedover substantially all of a surface of a first substrate. An assembledstructure comprising the first substrate/sealing glass layer/secondsubstrate can be assembled as above, and a laser can be used tolocally-define the sealing interface between the two substrates.

Laser 500 can have any suitable output to affect sealing. An examplelaser is a UV laser such as a 355 nm laser, which lies in the range oftransparency for common display glasses. A suitable laser power canrange from about 5 W to about 6.15 W.

The width of the sealed region, which can be proportional to the laserspot size, can be about 0.1 to 2 mm, e.g., 0.1, 0.2, 0.5, 1, 1.5 or 2mm. A translation rate of the laser (i.e., sealing rate) can range fromabout 1 mm/sec to 100 mm/sec, such as 1, 2, 5, 10, 20, 50 or 100 mm/sec.The laser spot size (diameter) can be about 0.5 to 1 mm.

Suitable glass substrates exhibit significant induced absorption duringsealing. In embodiments, first substrate 302 is a transparent glassplate like the ones manufactured and marketed by Corning Incorporatedunder the brand names of Code 1737 glass or Eagle 2000® glass.Alternatively, first substrate 302 can be any transparent glass platesuch as, for example, the ones manufactured and marketed by Asahi GlassCo. (e.g., AN100 glass), Nippon Electric Glass Co., (e.g., OA-10 glassor OA-21 glass), or Samsung Corning Precision Glass Co. Second substrate304 may be the same glass material as the first glass substrate, orsecond substrate 304 may be a non-transparent substrate. The glasssubstrates can have a coefficient of thermal expansion of less thanabout 150×10⁻⁷/° C., e.g., less than 50×10⁻⁷, 20×10⁻⁷ or 10×10⁻⁷/° C.

A plot of transmission versus wavelength for various display glasssubstrates is shown in FIG. 2. Glass C is a commercially-available,alkali-free, LCD glass that is manufactured using the float process.Glass A is a commercially-available aluminosilicate display glass. GlassB is a borosilicate LCD glass marketed by Corning, Incorporated thatcontains no added arsenic, antimony, barium or halides. At 355 nm, eachof the display glass substrates demonstrates a transparency of betweenabout 80 and 90%.

The temperature dependence of the UV absorption edge for silica glass isillustrated in FIG. 3. The absorption edge, which is about 8 eV at 273K,decreases to less than 6.5 eV at 1773K. Thus, as discussed above, such amaterial can exhibit a temperature-induced, transient absorption.

Shown in FIG. 4 is the dynamic change of transmission at 355 nm for anEagle 2000® glass substrate having a 1 micron thick layer of low meltingtemperature glass formed over a major surface of the substrate. FIG. 4shows an initial decrease in transmission (increase in absorption)between 0 and 15 seconds, followed by a rapid recovery of the inducedabsorption when the UV laser is switched off. As seen with reference toFIG. 4, the transient absorption is reversible and repeatable, whichenables the formation of a transparent seal. Absorption of laserradiation by the glass substrate can increase with laser exposure (andincreasing temperature) from 2-10% initially to 40% or more.

In embodiments, absorption at room temperature of a laser processingwavelength by the glass substrates is less than 15%. However, absorptionat elevated temperatures (e.g., greater than 400° C.) of a laserprocessing wavelength by the glass substrates is greater than 15%. Inembodiments, absorption by the glass substrate material increases, forexample, to values of 20, 30, 40, 50, 60% or more as the temperature ofthe glass substrate increases. During sealing, the glass substratetemperature proximate to the sealing interface can increase to at least400, 500, 600, 700 or 800° C.

FIG. 5 shows the effect of laser power on transmission for asingle-layer (˜0.5 μm) of low T_(g) sealing glass formed on a displayglass substrate. At low power, an initial decrease in transmission canbe attributed to a change in the absorption of the low T_(g) sealingglass material as it melts. Absorption and melting of the low T_(g)sealing glass are observed in the first plateau region and heatconduction to the display glass substrate can induce absorption by theglass substrate at longer processing times as its temperature risesconcomitantly toward its softening temperature. The additionalabsorption by the substrate can be affected by the laser power. In FIG.5, absorption by the low T_(g) sealing glass can be seen at about 3seconds and the induced absorption by the glass substrate can be seen atabout 17 seconds for 5 W incident laser power. Absorption by the glasssubstrate can be initiated at shorter process times by increasing theincident laser power. At 5.5 W, for example, the temperature-inducedabsorption by the glass substrate can be seen at about 9 seconds. A 6.15W, the respective absorption phenomena occur at about the same time.

FIG. 6 is a plot of transmission versus time for three different displayglass substrates showing the variability of the laser-induced melting onsubstrate composition. In FIG. 6, curve A corresponds to an alkali-freeborosilicate LCD glass, which exhibits softening at about 6 seconds.Curves B and C correspond to borosilicate LCD glasses. The Curve B glassexhibits softening at about 11 seconds, while the Curve C, which isessentially free of arsenic, antimony and halides, exhibits softening atabout 44 seconds. The major compositional differences between the CurveB glass and the Curve C glass as determined by inductively coupledplasma mass spectroscopy (ICP-MS) are summarized in the Table 1.

TABLE 1 Elemental impurity content in example display glasses ImpurityCurve B glass (ppm) Curve C glass(ppm) As 12 <1 Fe 140 110 Ga 14 9 K 9223 Mn 5 13 Na 280 160 P <10 26 Sb 6 2 Ti 43 76 Zn 5 5

In various embodiments of the present disclosure, the glass sealingmaterials and resulting layers are transparent and/or translucent, thin,impermeable, “green,” and configured to form hermetic seals at lowtemperatures and with sufficient seal strength to accommodate largedifferences in CTE between the sealing material and the adjacent glasssubstrates. In embodiments, the sealing layers are free of fillers. Infurther embodiments, the sealing layers are free of binders. In stillfurther embodiments, the sealing layers are free of fillers and binders.Further, organic additives are not used to form the hermetic seal. Thelow melting temperature glass materials used to form the sealinglayer(s) are not frit-based or powders formed from ground glasses. Inembodiments, the sealing layer material is a low T_(g) glass that has asubstantial optical absorption cross-section at a predeterminedwavelength which matches or substantially matches the operatingwavelength of a laser used in the sealing process.

In embodiments, absorption at room temperature of a laser processingwavelength by the low T_(g) glass layer is at least 15%.

In general, suitable sealant materials include low T_(g) glasses andsuitably reactive oxides of copper or tin. The glass sealing materialcan be formed from low T_(g) materials such as phosphate glasses, borateglasses, tellurite glasses and chalcogenide glasses. As defined herein,a low T_(g) glass material has a glass transition temperature of lessthan 400° C., e.g., less than 350, 300, 250 or 200° C.

Example borate and phosphate glasses include tin phosphates, tinfluorophosphates and tin fluoroborates. Sputtering targets can includesuch glass materials or, alternatively, precursors thereof. Examplecopper and tin oxides are CuO and SnO, which can be formed fromsputtering targets comprising pressed powders of these materials.

Optionally, the glass sealing compositions can include one or moredopants, including but not limited to tungsten, cerium and niobium. Suchdopants, if included, can affect, for example, the optical properties ofthe glass layer, and can be used to control the absorption by the glasslayer of laser radiation. For instance, doping with ceria can increasethe absorption by a low T_(g) glass barrier at laser processingwavelengths.

Example tin fluorophosphate glass compositions can be expressed in termsof the respective compositions of SnO, SnF₂ and P₂O₅ in a correspondingternary phase diagram. Suitable tin fluorophosphates glasses include20-100 mol % SnO, 0-50 mol % SnF₂ and 0-30 mol % P₂O₅. These tinfluorophosphates glass compositions can optionally include 0-10 mol %WO₃, 0-10 mol % CeO₂ and/or 0-5 mol % Nb₂O₅.

For example, a composition of a doped tin fluorophosphate startingmaterial suitable for forming a glass sealing layer comprises 35 to 50mole percent SnO, 30 to 40 mole percent SnF₂, 15 to 25 mole percentP₂O₅, and 1.5 to 3 mole percent of a dopant oxide such as WO₃, CeO₂and/or Nb₂O₅.

A tin fluorophosphate glass composition according to one particularembodiment is a niobium-doped tin oxide/tin fluorophosphate/phosphoruspentoxide glass comprising about 38.7 mol % SnO, 39.6 mol % SnF₂, 19.9mol % P₂O₅ and 1.8 mol % Nb₂O₅. Sputtering targets that can be used toform such a glass layer may include, expressed in terms of atomic molepercent, 23.04% Sn, 15.36% F, 12.16% P, 48.38% O and 1.06% Nb.

A tin phosphate glass composition according to an alternate embodimentcomprises about 27% Sn, 13% P and 60% O, which can be derived from asputtering target comprising, in atomic mole percent, about 27% Sn, 13%P and 60% O. As will be appreciated, the various glass compositionsdisclosed herein may refer to the composition of the deposited layer orto the composition of the source sputtering target.

As with the tin fluorophosphates glass compositions, example tinfluoroborate glass compositions can be expressed in terms of therespective ternary phase diagram compositions of SnO, SnF₂ and B₂O₃.Suitable tin fluoroborate glass compositions include 20-100 mol % SnO,0-50 mol % SnF₂ and 0-30 mol % B₂O₃. These tin fluoroborate glasscompositions can optionally include 0-10 mol % WO₃, 0-10 mol % CeO₂and/or 0-5 mol % Nb₂O₅.

Additional aspects of suitable low T_(g) glass compositions and methodsused to form glass sealing layers from these materials are disclosed incommonly-assigned U.S. Pat. No. 5,089,446 and U.S. patent applicationSer. Nos. 11/207,691, 11/544,262, 11/820,855, 12/072,784, 12/362,063,12/763,541 and 12/879,578, the entire contents of which are incorporatedby reference herein.

A total thickness of a glass sealing layer can range from about 100 nmto 10 microns. In various embodiments, a thickness of the layer can beless than 10 microns, e.g., less than 10, 5, 2, 1, 0.5 or 0.2 microns.Example glass sealing layer thicknesses include 0.1, 0.2, 0.5, 1, 2, 5or 10 microns.

According to embodiments, the choice of the sealing layer material andthe processing conditions for forming a sealing layer over a glasssubstrate are sufficiently flexible that the substrate is not adverselyaffected by formation of the glass layer.

Low melting temperature glasses can be used to seal or bond differenttypes of substrates. Sealable and/or bondable substrates includeglasses, glass-glass laminates, glass-polymer laminates, glass-ceramicsor ceramics, including gallium nitride, quartz, silica, calciumfluoride, magnesium fluoride or sapphire substrates. In embodiments, onesubstrate can be a phosphor-containing glass plate, which can be used,for example, in the assembly of a light emitting device.

Glass substrates can have any suitable dimensions. Substrates can haveareal (length and width) dimensions that independently range from 1 cmto 5 m (e.g., 0.1, 1, 2, 3, 4 or 5 m) and a thickness dimension that canrange from about 0.5 mm to 2 mm (e.g., 0.5, 0.6, 0.7, 0.8, 0.9, 1.0,1.2, 1.5 or 2 mm). In further embodiments, a substrate thickness canrange from about 0.05 mm to 0.5 mm (e.g., 0.05, 0.1, 0.2, 0.3, 0.4 or0.5 mm). In still further embodiments, a glass substrate thickness canrange from about 2 mm to 10 mm (e.g., 2, 3, 4, 5, 6, 7, 8, 9 or 10 mm).

A phosphor-containing glass plate, for example, comprising one or moreof a metal sulfide, metal silicate, metal aluminate or other suitablephosphor, can be used as a wavelength-conversion plate in white LEDlamps. White LED lamps typically include a blue LED chip that is formedusing a group III nitride-based compound semiconductor for emitting bluelight. White LED lamps can be used in lighting systems, or as backlightsfor liquid crystal displays, for example. The low melting temperatureglasses and associate sealing method disclosed herein can be used toseal or encapsulate the LED chip.

Hermetic encapsulation of a workpiece using the disclosed materials andmethods can facilitate long-lived operation of devices otherwisesensitive to degradation by oxygen and/or moisture attack. Exampleworkpieces, devices or applications include flexible, rigid orsemi-rigid organic LEDs, OLED lighting, OLED televisions, photovoltaics,MEMs displays, electrochromic windows, fluorophores, alkali metalelectrodes, transparent conducting oxides, quantum dots, etc.

As used herein, a hermetic layer is a layer which, for practicalpurposes, is considered substantially airtight and substantiallyimpervious to moisture and/or oxygen. By way of example, the hermeticseal can be configured to limit the transpiration (diffusion) of oxygento less than about 10⁻² cm³/m²/day (e.g., less than about 10⁻³cm³/m²/day), and limit the transpiration (diffusion) of water to about10⁻² g/m²/day (e.g., less than about 10⁻³, 10⁻⁴, 10⁻⁵ or 10⁻⁶ g/m²/day).In embodiments, the hermetic seal substantially inhibits air and waterfrom contacting a protected workpiece.

FIG. 7 is a plan-view optical micrograph showing a spot seal between twodisplay glass substrates. The diameter of the sealed region is about 0.5mm.

FIGS. 8A and 8B are plan-view optical micrographs showing a portion ofsealing interface between two display glass substrates. FIG. 8A shows asealing interface having a width of about 0.5 mm. FIG. 8B is a plan-viewof an un-sealed region adjacent to the sealing interface.

A simplified schematic showing a portion of an LED assembly is depictedin FIG. 9a and FIG. 9b . Components of the assembly according to variousembodiments are shown in FIG. 9a , and an example of an assembledarchitecture is shown in FIG. 9b . The LED assembly 900 includes anemitter 920, a wavelength-conversion plate 940, and a quantum dotsub-assembly 960. As explained in further detail below, glass layers canbe used to bond and/or seal various components of the LED assembly. Inthe illustrated embodiment, the wavelength-conversion plate 940 isdisposed directly over the emitter 920, and the quantum dot sub-assembly960 is disposed directly over the wavelength-conversion plate 940.

One component of the LED assembly 900 is a quantum dot sub-assembly 960,which in various embodiments includes a plurality of quantum dots 950disposed between an upper plate 962 a, 962 b and a lower plate 964. Thequantum dots in one embodiment are located within a cavity 966 a that isdefined by upper plate 962 a, lower plate 964 and glass-coated gasket980. In an alternate embodiment, the quantum dots are located within acavity 966 b that is formed in the upper plate 962 b, and which isdefined by upper plate 962 b and lower plate 964. In the firstembodiment, the upper plate 962 a and the lower plate 964 can be sealedalong respective contact surfaces by a glass-coated gasket 980 havingrespective glass layers 970. In the second embodiment, the upper plate962 b and the lower plate 964 can be directly sealed along respectivecontact surfaces by a glass layer 970. In non-illustrated embodiments,quantum dots may be encapsulated by a low-melting temperature glasswithin the cavities 966 a, 966 b.

A thermo-compressive stress may be applied to affect sealing between theupper and lower plates, or the interface(s) may be laser sealed byfocusing a suitable laser on or near the glass layer(s) through eitherof the upper or lower plates.

A further component of the LED assembly 900 is an emitter 920 with awavelength-conversion plate 940 formed over an output of the emitter.The emitter 920 can include a semiconductor material such as a galliumnitride wafer, and the wavelength-conversion plate 940 can comprise aglass or ceramic having particles of a phosphor embedded or infiltratedtherein. In embodiments, a low melting temperature glass can be used todirectly bond a sealing surface of the wavelength-conversion plate to asealing surface of the emitter.

Alternate embodiments, which include example photovoltaic (PV) device ororganic light emitting diode (OLED) device architectures, are depictedin FIG. 10. As shown in FIG. 10a , active component 951 is locatedwithin a cavity that is defined by upper plate 962 a, lower plate 964and glass-coated gasket 980. Glass layers 970 can be formed betweenopposing sealing surfaces in the upper plate and the glass-coatedgasket, and in the glass-coated gasket and the lower plate,respectively. The geometry illustrated in FIG. 10a is similar to thegeometry of FIG. 9a , except the upper glass layer in FIG. 10a extendsbeyond the contact surface with gasket 980. Such an approach may bebeneficial insomuch as a patterning step of the upper glass layer may beomitted. In the example of an OLED display, active component 951 mayinclude an organic emitter stack that is sandwiched between an anode anda cathode. The cathode, for example can be a reflective electrode or atransparent electrode.

Illustrated in FIG. 10b is a geometry where active component 951 isencapsulated between upper plate 962 a and lower plate 964 using aconformal glass layer 970. Illustrated in FIG. 10c is a structure whereactive component 951 is located within a cavity that is defined by upperplate 962 a and lower plate 964. The geometry illustrated in FIG. 10c issimilar to the geometry of FIG. 9b , except the glass layer in FIG. 10cextends beyond the contact surface between the upper and lower glassplates.

To form a seal or bond between respective sealing surfaces, initially aglass layer may be formed on one or both of the surfaces. In oneembodiment, a glass layer is formed over each of the surfaces to bebonded, and after the surfaces are brought together, a focused laser isused to melt the glass layers and the adjacent sealing surface materialto create the seal. In one further embodiment, a glass layer is formedover only one of the surfaces to be bonded, and after the glass-coatedsurface and non-glass-coated surface are brought together, a focusedlaser is used to locally melt the glass layer and the respectivesurfaces to be bonded to create the seal.

A method of bonding two substrates comprises forming a first glass layeron a sealing surface of a first substrate, forming a second glass layeron a sealing surface of a second substrate, placing at least a portionof the first glass layer in physical contact with at least a portion ofthe second glass layer, and heating the glass layers to locally melt theglass layers and the sealing surfaces to form a glass-to-glass weldbetween the first and second substrates.

In alternate embodiments, the sealing approaches disclosed herein can beused to form vacuum-insulated glass (VIG) windows where thepreviously-discussed active components (such as the emitter, collectoror quantum dot architecture) are omitted from the structure, and a lowmelting temperature glass layer is used to seal respective bondinginterfaces between opposing glass panes in a multi-pane window. Asimplified VIG window architecture is shown in FIG. 11, where opposingglass panes 962 a, 964 are separated by a glass-coated gasket 980 thatis positioned along respective peripheral sealing surfaces.

In each of the sealing architectures disclosed herein, sealing using alow melting temperature glass layer may be accomplished by the localheating, melting and then cooling of both the glass layer and the glasssubstrate material located proximate to the sealing interface.

As used herein, the singular forms “a,” “an” and “the” include pluralreferents unless the context clearly dictates otherwise. Thus, forexample, reference to a “glass substrate” includes examples having twoor more such “glass substrates” unless the context clearly indicatesotherwise.

Ranges can be expressed herein as from “about” one particular value,and/or to “about” another particular value. When such a range isexpressed, examples include from the one particular value and/or to theother particular value. Similarly, when values are expressed asapproximations, by use of the antecedent “about,” it will be understoodthat the particular value forms another aspect. It will be furtherunderstood that the endpoints of each of the ranges are significant bothin relation to the other endpoint, and independently of the otherendpoint.

Unless otherwise expressly stated, it is in no way intended that anymethod set forth herein be construed as requiring that its steps beperformed in a specific order. Accordingly, where a method claim doesnot actually recite an order to be followed by its steps or it is nototherwise specifically stated in the claims or descriptions that thesteps are to be limited to a specific order, it is no way intended thatany particular order be inferred.

It is also noted that recitations herein refer to a component being“configured” or “adapted to” function in a particular way. In thisrespect, such a component is “configured” or “adapted to” embody aparticular property, or function in a particular manner, where suchrecitations are structural recitations as opposed to recitations ofintended use. More specifically, the references herein to the manner inwhich a component is “configured” or “adapted to” denotes an existingphysical condition of the component and, as such, is to be taken as adefinite recitation of the structural characteristics of the component.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the present inventionwithout departing from the spirit and scope of the invention. Sincemodifications, combinations, sub-combinations and variations of thedisclosed embodiments incorporating the spirit and substance of theinvention may occur to persons skilled in the art, the invention shouldbe construed to include everything within the scope of the appendedclaims and their equivalents.

We claim:
 1. A sealed device comprising: a non-frit, low T_(g) glasssealing layer formed over a surface of a first substrate; and a deviceprotected between the first substrate and a second substrate, whereinthe glass sealing layer is in contact with the second substrate, andwherein the device is hermetically sealed between the first and secondsubstrates as a function of a composition of impurities in the first orsecond substrates and as a function of a composition of the glasssealing layer through a local heating of the glass sealing layer withlaser radiation having a predetermined wavelength.
 2. The device ofclaim 1, wherein the glass sealing layer comprises: 20-100 mol % SnO;0-50 mol % SnF₂; and 0-30 mol % P₂O₅ or B₂O₃.
 3. The device of claim 1,wherein the impurities in the first or second substrates are selectedfrom the group consisting of As, Fe, Ga, K, Mn, Na, P, Sb, Ti, Zn, Snand combinations thereof.
 4. The device of claim 1, wherein the firstand second substrates have different lateral dimensions, different CTEs,different thicknesses, or combinations thereof.
 5. The device of claim1, wherein one of the first and second substrates is a glass substrate.6. The device of claim 5, wherein the other of the first and secondsubstrates is a ceramic substrate or a metal substrate.
 7. The device ofclaim 1, wherein at least one of the first and second substrates is aglass substrate having (a) an absorption of laser radiation having apredetermined wavelength that is less than 15% at room temperature and(b) an induced transient absorption of the laser radiation that isgreater than 15% at a sealing temperature greater than 400° C.
 8. Thedevice of claim 7, wherein the predetermined wavelength is chosen fromUV wavelengths.
 9. The device of claim 1, wherein a thickness of theglass sealing layer ranges from about 100 nm to 10 microns.
 10. Thedevice of claim 1, wherein the glass sealing layer is opticallytransparent.
 11. The device of claim 1, wherein the glass sealing layeris free of fillers.
 12. The device of claim 1, wherein the device isselected from the group consisting of a light emitting diode, an organiclight emitting diode, a quantum dot, and combinations thereof.
 13. Asealed device comprising: a glass film formed over a surface of a firstsubstrate; and a device protected between the first substrate and asecond substrate, wherein the glass film is in contact with the secondsubstrate, wherein the device is hermetically sealed between the firstand second substrates, and wherein at least one of the first and secondsubstrates is a glass substrate having (a) an absorption of laserradiation having a predetermined wavelength that is less than 15% atroom temperature and (b) an induced transient absorption of the laserradiation that is greater than 15% at a sealing temperature greater than400° C.
 14. The device of claim 13, wherein the glass film comprises anon-frit, low T_(g) glass.
 15. The device of claim 13, wherein the glassfilm comprises: 20-100 mol % SnO; 0-50 mol % SnF₂; and 0-30 mol % P₂O₅or B₂O₃.
 16. The device of claim 13, wherein the glass film is opticallytransparent.
 17. The device of claim 13, wherein the glass film is freeof fillers.
 18. The device of claim 13, wherein a thickness of the glassfilm ranges from about 100 nm to 10 microns.
 19. The device of claim 13,wherein one of the first and second substrates is a ceramic substrate ora metal substrate.
 20. The device of claim 13, wherein the device isselected from the group consisting of a light emitting diode, an organiclight emitting diode, a quantum dot, and combinations thereof.